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| FJL4315 FJL4315 Audio Power Amplifier * * * * High Current Capability : IC=15A High Power Dissipation Wide S.O.A Complement to FJL4215 TO-264 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 230 230 5 15 1.5 150 150 - 50 ~ 150 Units V V V A A W C C Electrical Characteristics TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob * Pulse Test : PW=20us Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=5mA, IE=0 IC=10mA, RBE= IE=5mA, IC=0 VCB=230V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A VCE=5V, IC=7A IC=8A, IB=0.8A VCE=5V, IC=7A VCE=5V, IC=1A VCB=10V, f=1MHz Min. 230 230 5 Typ. Max. Units V V V 5.0 5.0 55 35 60 0.4 1.0 30 200 3.0 1.5 160 uA uA V V MHz pF hFE Classification Classification hFE1 R 55 ~ 110 O 80 ~ 160 (c)2003 Fairchild Semiconductor Corporation Rev. B, March 2003 FJL4315 Typical Characteristics 16 1000 IB=200mA 14 IC[A], COLLECTOR CURRENT hFE, DC CURRENT GAIN 12 IB = 180mA IB = 160mA IB = 140mA IB = 120mA IB = 100mA IB = 80mA VCE = 5V 100 10 8 IB = 60mA 6 IB = 40mA 4 10 2 IB = 0 0 0 2 4 6 8 10 12 14 16 18 20 1 0.01 0.1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10000 IC = 10 IB 1 VCE(sat)[mV], SATURATION VOLTAGE IC = 10IB VBE(sat), SATURATION VOLTAGE 1000 0.1 100 0.01 1E-3 0.01 0.1 1 10 100 10 0.01 0.1 1 10 100 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 12 100 VCE = 5V 10 IC MAX. (Pulsed*) 10ms* IC[A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 10 IC MAX. (DC) 100ms* DC 8 6 1 4 0.1 *SINGLE NONREPETITIVE PULSE TC=25[ C] 0.01 1 10 100 o 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VBE[V], BASE-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Safe Operating Area (c)2003 Fairchild Semiconductor Corporation Rev. B, March 2003 FJL4315 Typical Characteristics 200 PC[W], POWER DISSIPATION 160 120 80 40 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 7. Power Derating (c)2003 Fairchild Semiconductor Corporation Rev. B, March 2003 FJL4315 Package Dimensions TO-264 6.00 0.20 20.00 0.20 (4.00) (8.30) (8.30) (2.00) (1.00) (9.00) (9.00) (11.00) (0.50) 20.00 0.20 2.50 0.10 1.50 0.20 (R1 (7.00) (7.00) 4.90 0.20 (1.50) 2.50 0.20 (1.50) 3.00 0.20 1.00 -0.10 +0.25 (2.00) 20.00 0.50 (R 2.0 o3.3 0 0 .20 .00 0) ) (1.50) 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.10 +0.25 2.80 0.30 5.00 0.20 3.50 0.20 (0.15) (1.50) (2.80) Dimensions in Millimeters (c)2003 Fairchild Semiconductor Corporation Rev. B, March 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2003 Fairchild Semiconductor Corporation Rev. I2 |
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